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SILICON RF DEVICES_2023

SILICON RF DEVICES_2023
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Better Performance for Radio Communication Network Mitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio, Professional Mobile Radios, Amateur Radios and TELEMATICS for automotive. Mitsubishi Electric Silicon RF Devices strongly support for Radio communication network. Please visit our website for further details. PRODUCT LIST 3.6V Operation High Output Power Si MOS FET (Discrete) 7.2v Operation High Output Power Si MOS FET (Discrete) 12.5v Operation High Output Power Si MOS FET (Discrete) 7.2v Operation High Output Power Si MOS FET...

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■ HIGH OUTPUT POWER Si MOS FET MODULE 135 PRODUCT LIST

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PRO D UC T L I S T PROD ■ 3.6V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) LINE UP Type Number Frequency Band Package Type Package Type Ta=25°C †: Gate Protection Diode ■ 7.2V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) SELECTION MAP Type Number Frequency Band PRODUCT LIST Package Type Ta=25°C †: Gate Protection Diode ■ 12.5V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number Frequency Band Ta=25°C †: Gate Protection Diode ★: New product

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■ 7.2V OPERATION HIGH OUTPUT POWER Si MOS FET (DUAL FET DISCRETE) Frequency Band Package Type Type Number Ta=25°C †: Gate Protection Diode PRODUCT LIST APPLICATION Type Name Definition of Silicon RF Devices ■ HIGH OUTPUT POWER Si MOS FET (Discrete Devices) RD 08 M U S 2 Si MOS FET (Discrete) Output Power (W) Operation Voltage (V) Symbol Voltage 3.6V 7.2V 12.5V Symbol Frequency Range H V U M Outline Symbol Serial Number Segment S Mold F Flange P Power Mold Mini ■ HIGH OUTPUT POWER Si MOS FET MODULE RA 07 M 4452 M Module Output Power (W) Operation Voltage (V) Symbol Voltage M N H Frequency...

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P ROD U CT LI ST ■ 7.2V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE LINE UP Package Type Package Type Type Number ■ 9.6V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE Max.ratings VDD [V] PRODUCT LIST APPLICATION PACK AGE OUTLINE 5 Type Number

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■ 12.5V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE f [MHz] Package Type *1: When Po=8W *2: When Po=7W ★: New product PRODUCT LIST Type Number SiRF devices are compliant with the RoHS: Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equip

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APPLICA T I O N ■ 3.6V OPERATION RECOMMENDED LINE UP LINE UP ■ 7.2V OPERATION RECOMMENDED LINE UP SELECTION MAP ■ 12.5V OPERATION RECOMMENDED LINE UP PRODUCT LIST Precautions for the use of Mitsubishi Electric silicon RF devices 01.This general catalog do not guarantee the product specifications. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices from the list of contact addresses listed on the last page for further information. 02.RA series...

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SIDE VIEW BOTTOM VIEW DETAIL A SIDE VIEW Pin No. ① Drain [output] ② Source [GND] ③ Gate [input] ④ Source UNIT: mm ( ): reference value Pin No. ① Gate ② Source ③ Drain INDEX MARK [Gate] INDEX MARK (GATE) Pin No. ① DRAIN ② GATE ③ SOURCE (COMMON) UNIT: mm ( ): reference value UNIT: mm ( ): reference value Pin No. ① Drain ② Source ③ Gate INDEX MARK (Gate) PRODUCT LIST * : The height of terminals shows root. Pin No. ① Drain ② Source ③ Gate UNIT: mm Pin No. ① DRAIN ② SOURCE (COMMON) ③ DRAIN ④ SOURCE (COMMON) ⑤ SOURCE (COMMON) ⑥ GATE ⑦ SOURCE (COMMON) ⑧ GATE ⑨ SOURCE (COMMON) INDEX MARK (GATE)

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UNIT: mm ( ): reference value Pin No. ① RF Input(Pin) ② Gate Voltage(VGG) ③ Drain Voltage(VDD) ④ RF Output(Pout) ⑤ RF Ground(Fin) UNIT: mm ( ): reference value tolerance of no designation ; ±0.5 Pin No. ① RF Input(Pin) ② Gate Voltage(VGG) ③ Drain Voltage(VDD) ④ RF Output(Pout) ⑤ RF Ground(Fin) UNIT: mm ( ): reference value Pin No. ① RF Input (Pin)+VGG1 ② Final Stage Gate Voltage(VGG2) ③ Drain Voltage(VDD) ④ RF Output(Pout) ⑤ RF Ground(Fin) UNIT: mm ( ): reference value Pin No. [H2M] ① RF Input(Pin) ② Gate Voltage(VGG) ③ Drain Voltage(VDD) ④ RF Output(Pout) ⑤ RF Ground(Fin) PRODUCT LIST

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PRODUCT LIST

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Mitsubishi Electric High Frequency Devices Website Keep safety first in your circuit designs! • Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any...

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