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SILICON RF DEVICES_2018

SILICON RF DEVICES_2018
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MITSUBISHI M'W ELECTRIC Changes for the Better SILICON RF DEVICES

Better Performance for Radio Communication Network Mitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio, Professional Mobile Radios, Amateur Radios and TELEMATICS for automotive. Mitsubishi Electric Silicon RF Devices strongly support for Radio communication network. LINE UP MAP For PRODUCT SELECTION LIST 3.6V Operation High Output Power Si MOS FET (Discrete) 9.6v Operation High Output Power Si MOS FET Module 12.5v Operation High Output Power Si MOS FET Module 7.2v Operation High Output Power Si MOS FET Module 12.5v Operation High...

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PRODUCT LIST I 3.6V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Structure Type Number Frequency Band Package Type Ta=25°C †: Gate Protection Diode I 7.2V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Max.ratings Frequency Band Type Number PRODUCT LIST Package Type Ta=25°C †: Gate Protection Diode #: New Product I 12.5V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Max.ratings Type Number Ceramic (Large)

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I 7.2V OPERATION HIGH OUTPUT POWER Si MOS FET (dual fet discrete) Type Number Ta=25°C t: Gate Protection Diode Type Name Definition of Silicon RF Devices I HIGH OUTPUT POWER Si MOS FET (Discrete Devices) RD 07 M U S 2B n—i r i r~ IE 0 IE II B I Operation Voltage (V) □ Si MOS FET (Discrete) IE Output Power (W) Serial Number I HIGH OUTPUT POWER Si MOS FET MODULE B IE B □ Module IE Output Power (W) LINE UP SELECTION MAP PRODUCT LIST APPLICATION PACKAGE OUTLINE Symbol Frequency Range (Example) (Example) Symbol Unit M MHz G GHz Note: Type number show the outline of products. For...

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LINE UP SELECTION MAP PRODUCT LIST APPLICATION PACKAGE OUTLINE PRODUCT LIST Ta=25°C *1: When Po=8W *2: When Po=7W ★: New Product

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I 12.5V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE Type Number Ta=25°C *: Vggi, Vgg2 Separation type *1: When Po=8W *2: When Po=7W ★: New Product LINE UP SELECTION MAP PRODUCT LIST APPLICATION PACKAGE OUTLINE SiRF devices are compliant with the RoHS(2011/65/eu). — RoHS: Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment

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I 3.6V OPERATION RECOMMENDED LINE UP LINE UP I 7.2V OPERATION RECOMMENDED LINE UP RD01MUS2B PRODUCT LIST I 12.5V OPERATION RECOMMENDED LINE UP RD04HMS2 Precautions for the use of Mitsubishi Electric silicon RF power amplifier devices 01.This general catalog do not guarantee the product specifications. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices from the list of contact addresses listed on the last page for further information. 02.RA series...

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Pin No. ① Gate ② Source ③ Drain Pin No. ① Gate ② Source ③ Drain UNIT: mm INDEX MARK [Gate] SIDE VIEW UNIT: mm ( ): reference value SIDE VIEW Pin No. ① Drain [output] ② Source [GND] ③ Gate [input] ④ Source UNIT: mm ( ): reference value INDEX MARK (GATE) 1.47±0.05 Pin No. ① DRAIN ② GATE ③ SOURCE (COMMON) Pin No. ① Drain ② Source ③ Gate BOTTOM VIEW * : The height of terminals shows root. Pin No. ① Drain ② Source ③ Gate INDEX MARK (Gate) PRODUCT LIST

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PACKAGE OUTLINE LINE UP SELECTION MAP PRODUCT LIST APPLICATION PACKAGE OUTLINE Pin No. © DRAIN © SOURCE (COMMON) ® DRAIN ® SOURCE (COMMON) © SOURCE (COMMON) © GATE ® SOURCE (COMMON) ® GATE ® SOURCE (COMMON) INDEX MARK ®©@®®® Pin No. © N.C. © N.C. © N.C. © Drain2 (Output2) © Drain2 (Output2) © Drain2 (Output2) ® N.C. ® N.C. © N.C. ® N.C ® N.C ® N.C ® Gate2 (In ® Gate2 (in ® Gate2 (in ® N.C ® N.C ® N.C © ©=> © ® Draini (Outputi) ® N.C. ® N.C. @ N.C. © N.C. @ Gatel (Inputi) ® Source (GND) :® UNIT: mm ( ): reference value

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UNIT: mm ( ): reference value tolerance of no designation ; ±0.5 Pin No. ① RF Input(Pin) ② Gate Voltage(VGG) ③ Drain Voltage(VDD) ④ RF Output(Pout) ⑤ RF Ground(Fin) UNIT: mm ( ): reference value Pin No. ① RF Input(Pin) ② Gate Voltage(VGG) ③ Drain Voltage(VDD) ④ RF Output(Pout) ⑤ RF Ground(Fin) Pin No. [H2M(A)] ① RF Input (P in)+VGG1 ② Final Stage Gate Voltage(VGG2) ③ Drain Voltage(VDD) ④ RF Output(Pout) UNIT: mm ⑤ RF Ground(Fin) ( ): reference value Pin No. [H2M] ① RF Input (P in) ② Gate Voltage(VGG) ③ Drain Voltage(VDD) ④ RF Output(Pout) ⑤ RF Ground(Fin))

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Please visit our website for further details. -Keep safety first in your circuit designs! - • Mitsubishi Electric Corporation puts the maximum effort Into making semiconductor products better and more reliable, but there Is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal Injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as 0) placement of substitutive, auxiliary circuits, (10 use of non-flammable material or (III) prevention against any...

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