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Silicon RF Devices_2013

Silicon RF Devices_2013
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Better Performance for Radio Communication Network Mitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio, Professional Mobile Radios, Amateur Radios, Car Phones for GSM/AMPS and TELEMATICS for automotive. Mitsubishi Electric Silicon RF Devices strongly support for Radio communication network. 3.6V Operation High Output Power Si MOS FET (Discrete) 9.6v Operation High Output Power Si MOS FET Module 12.5v Operation High Output Power Si MOS FET Module 7.2v Operation High Output Power Si MOS FET Module 12.5v Operation High Output Power...

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HIGH OUTPUT POWER Si MOS FET MODULE

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I P R O D U C T LIST I 3.6V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) LINE UP Package Outline Package Outline Package Outline Ta=25°C †: Gate Protection Diode ##: Under Development I 7.2V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number Ta=25°C †: Gate Protection Diode ##: Under Development PRODUCT LIST I 12.5V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number PACKAGE OUTLINE Ta=25°C †: Gate Protection Diode ##: Under Development SOT-89 SOT-89 SLP TO-220S TO-220S TO-220S TO-220S Ceramic (Small) Ceramic (Small) Ceramic (Small) HPM003 HPM001 Ceramic (Large)...

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Ceramic (Small) Ceramic (Large) SELECTION MAP PRODUCT LIST APPLICATION Type Name Definition of Silicon RF Devices I HIGH OUTPUT POWER Si MOS FET (Discrete Devices) RD 07 M U S 2B Si MOS FET (Discrete) Output Power (W) Operation Voltage (V) Symbol Voltage 7.2V 9.6V 12.5V Symbol Frequency Range H V U M Outline Symbol Serial Number Segment S Mold Flange F P Power Mold Mini I HIGH OUTPUT POWER Si MOS FET MODULE PACKAGE OUTLINE RA 07 M 4452 M Module Output Power (W) Operation Voltage (V) Symbol Voltage M N H Frequency Range (MHz) Symbol Frequency Unit Frequency Range Note: Type number show the...

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I P R O D U C T LIST I 7.2V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE LINE UP Type Number Package Outline Package Outline I 9.6V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE Type Number PRODUCT LIST PACKAGE OUTLINE

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I 12.5V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE f [MHz] Package Outline PRODUCT LIST Type Number RoHS Compliant

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I A P P LI C AT ION I VHF~800MHZ BAND 7.2V OPERATION RECOMMENDED LINE UP LINE UP I VHF~UHF BAND 12.5V OPERATION RECOMMENDED LINE UP PRODUCT LIST Precautions for the use of Mitsubishi Electric silicon RF power amplifier devices 01.This general catalog do not guarantee the product specifications. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices from the list of contact addresses listed on the last page for further information. 02.RA series products...

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Gate Source Gate Source UNIT: mm ( ): reference value Drain Source BOTTOM VIEW UNIT: mm ( ): reference value Drain Source SIDE VIEW SIDE VIEW (0.25) INDEX MARK (Gate) INDEX MARK [Gate] Gate [input] Source PRODUCT LIST Drain [output] Source [GND] Drain Source PACKAGE OUTLINE 3.0±0.4* * The height of terminals shows root. * The height of terminals shows root.

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Pin SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) SOURCE (COMMON) Pin SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) SOURCE (COMMON) (50.4) UNIT: mm ( ): reference value tolerance of no designation ; ±0.5 Drain Voltage(VDD) RF Output(Pout) PACKAGE OUTLINE RF Input(Pin) Gate Voltage(VGG) Drain Voltage(VDD) RF Output(Pout) RF Input(Pin) Gate Voltage(VGG) Pin SOURCE (COMMON) OPEN DRAIN SOURCE (COMMON) SOURCE (COMMON) OPEN GATE SOURCE (COMMON) SOURCE (COMMON) PRODUCT LIST Pin SOURCE (COMMON) OPEN DRAIN SOURCE...

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Drain Voltage(VDD) RF Output(Pout) RF Input(Pin) Gate Voltage(VGG) Drain Voltage(VDD) RF Output(Pout) UNIT: mm ( ): reference value tolerance of no designation ; ±0.5 RF Input(Pin) Gate Voltage(VGG) UNIT: mm ( ): reference value PRODUCT LIST RF Input(Pin) Final Stage Gate Voltage(VGG2) RF Output(Pout) First Stage Gate Voltage(VGG1) Drain Voltage(VDD) RF Ground(Fin) UNIT: mm ( ): reference value UNIT: mm ( ): reference value Drain Voltage(VDD) RF Output(Pout) RF Input(Pin) Gate Voltage(VGG) Drain Voltage(VDD) RF Output(Pout) RF Input(Pin) Gate Voltage(VGG) PACKAGE OUTLINE UNIT: mm ( ):...

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Please visit our website for further details. Keep safety first in your circuit designs! • Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any...

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