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Silicon RF Devices_2013

Silicon RF Devices_2013
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Silicon RF Devices_2013

Product catalog summary
Overview
Mitsubishi Electric's Silicon RF Devices are essential for enhancing RF power amplification in various radio communication networks, including mobile and professional radios, amateur radios, GSM/AMPS car phones, and automotive telematics.

Product Line-Up
The document details a range of Silicon RF Devices, including discrete Si MOS FETs and hybrid ICs, categorized by operation voltages: 3.6V, 7.2V, 9.6V, and 12.5V, each with different output power and frequency ranges.

Specifications
Specifications include maximum ratings, frequency ranges, input/output power, and efficiency, along with package outlines like SOT-89, TO-220S, and ceramic packages.

Applications
These devices are recommended for VHF to UHF bands, particularly for 7.2V and 12.5V operations, suitable for consumer mobile communication terminals but not for critical communication elements like base stations.

Precautions and Recommendations
Emphasizes ESD precautions, maintaining low device temperatures, and using appropriate heat sinks. Advises against operating under severe load conditions to prevent damage.

Quality and Warranty
Products are RoHS compliant. The general catalog does not guarantee specifications; users should consult formal specification sheets. Warranty is void if the product is modified or the protective cap is removed.

Conclusion
Mitsubishi Electric's Silicon RF Devices provide high output power for various radio communication applications. Adherence to specified precautions and consulting formal specifications is crucial for optimal performance and reliability.
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Catalog excerpts

Silicon RF Devices_2013-2

Better Performance for Radio Communication Network Mitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio, Professional Mobile Radios, Amateur Radios, Car Phones for GSM/AMPS and TELEMATICS for automotive. Mitsubishi Electric Silicon RF Devices strongly support for Radio communication network. 3.6V Operation High Output Power Si MOS FET (Discrete) 9.6v Operation High Output Power Si MOS FET Module 12.5v Operation High Output Power Si MOS FET Module 7.2v Operation High Output Power Si MOS FET Module 12.5v Operation High Output Power Si...

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Silicon RF Devices_2013-3

HIGH OUTPUT POWER Si MOS FET MODULE

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Silicon RF Devices_2013-4

I P R O D U C T LIST I 3.6V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) LINE UP Package Outline Package Outline Package Outline Ta=25°C †: Gate Protection Diode ##: Under Development I 7.2V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number Ta=25°C †: Gate Protection Diode ##: Under Development PRODUCT LIST I 12.5V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number PACKAGE OUTLINE Ta=25°C †: Gate Protection Diode ##: Under Development SOT-89 SOT-89 SLP TO-220S TO-220S TO-220S TO-220S Ceramic (Small) Ceramic (Small) Ceramic (Small) HPM003 HPM001 Ceramic (Large) HPM004...

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Silicon RF Devices_2013-5

Ceramic (Small) Ceramic (Large) SELECTION MAP PRODUCT LIST APPLICATION Type Name Definition of Silicon RF Devices I HIGH OUTPUT POWER Si MOS FET (Discrete Devices) RD 07 M U S 2B Si MOS FET (Discrete) Output Power (W) Operation Voltage (V) Symbol Voltage 7.2V 9.6V 12.5V Symbol Frequency Range H V U M Outline Symbol Serial Number Segment S Mold Flange F P Power Mold Mini I HIGH OUTPUT POWER Si MOS FET MODULE PACKAGE OUTLINE RA 07 M 4452 M Module Output Power (W) Operation Voltage (V) Symbol Voltage M N H Frequency Range (MHz) Symbol Frequency Unit Frequency Range Note: Type number show the outline...

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Silicon RF Devices_2013-6

I P R O D U C T LIST I 7.2V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE LINE UP Type Number Package Outline Package Outline I 9.6V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE Type Number PRODUCT LIST PACKAGE OUTLINE

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Silicon RF Devices_2013-7

I 12.5V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE f [MHz] Package Outline PRODUCT LIST Type Number RoHS Compliant

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Silicon RF Devices_2013-8

I A P P LI C AT ION I VHF~800MHZ BAND 7.2V OPERATION RECOMMENDED LINE UP LINE UP I VHF~UHF BAND 12.5V OPERATION RECOMMENDED LINE UP PRODUCT LIST Precautions for the use of Mitsubishi Electric silicon RF power amplifier devices 01.This general catalog do not guarantee the product specifications. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices from the list of contact addresses listed on the last page for further information. 02.RA series products (RF...

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Silicon RF Devices_2013-9

Gate Source Gate Source UNIT: mm ( ): reference value Drain Source BOTTOM VIEW UNIT: mm ( ): reference value Drain Source SIDE VIEW SIDE VIEW (0.25) INDEX MARK (Gate) INDEX MARK [Gate] Gate [input] Source PRODUCT LIST Drain [output] Source [GND] Drain Source PACKAGE OUTLINE 3.0±0.4* * The height of terminals shows root. * The height of terminals shows root.

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Silicon RF Devices_2013-10

Pin SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) SOURCE (COMMON) Pin SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) SOURCE (COMMON) (50.4) UNIT: mm ( ): reference value tolerance of no designation ; ±0.5 Drain Voltage(VDD) RF Output(Pout) PACKAGE OUTLINE RF Input(Pin) Gate Voltage(VGG) Drain Voltage(VDD) RF Output(Pout) RF Input(Pin) Gate Voltage(VGG) Pin SOURCE (COMMON) OPEN DRAIN SOURCE (COMMON) SOURCE (COMMON) OPEN GATE SOURCE (COMMON) SOURCE (COMMON) PRODUCT LIST Pin SOURCE (COMMON) OPEN DRAIN SOURCE (COMMON)...

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Silicon RF Devices_2013-11

Drain Voltage(VDD) RF Output(Pout) RF Input(Pin) Gate Voltage(VGG) Drain Voltage(VDD) RF Output(Pout) UNIT: mm ( ): reference value tolerance of no designation ; ±0.5 RF Input(Pin) Gate Voltage(VGG) UNIT: mm ( ): reference value PRODUCT LIST RF Input(Pin) Final Stage Gate Voltage(VGG2) RF Output(Pout) First Stage Gate Voltage(VGG1) Drain Voltage(VDD) RF Ground(Fin) UNIT: mm ( ): reference value UNIT: mm ( ): reference value Drain Voltage(VDD) RF Output(Pout) RF Input(Pin) Gate Voltage(VGG) Drain Voltage(VDD) RF Output(Pout) RF Input(Pin) Gate Voltage(VGG) PACKAGE OUTLINE UNIT: mm ( ): reference...

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Silicon RF Devices_2013-12

Please visit our website for further details. Keep safety first in your circuit designs! • Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction...

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