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HIGH FREQUENCY DEVICES_2018

HIGH FREQUENCY DEVICES_2018
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MITSUBISHI M'W ELECTRIC Changes for the Better Frequency Devices

The Best Solution for Realizing the Information and Communication Era Communication networks, such as high speed Internet, and high-speed data communication, are developing rapidly. We are ready to offer the best solution to the systems for realizing the infomation and communication era by providing of the GaN/GaAs products. I GaAs HEMT SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS (Discrete) General Use 2.4GHz Plastic Mold Package (GD-32) 4-pin Mold Package (GD-30) G Satellite Broadcasting G Communication Receiver #: New Product I: AEC-Q101 qualified HEMT: High Electron Mobility...

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I GaAs HEMT SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS (Discrete) MGF4921AM1 MGF4934CM MGF4935AM MGF4937AM MGF4938AM* MGF4941AL MGF4964BL MGF4965BM MGF4941CL1 Type Number Added Frequency Source r t Efficiency [GHz] Voltage '“Ur«fni [%] [V] LAJ Package Outline I GaN HEMT SERIES FOR MOBILE COMMUNICATION BASE TRANSCEIVER STATION I GaN HEMT SERIES FOR SATELLITE COMMUNICATION (Internally Matched) TYPE NAME DEFINITION OF HIGH FREQUENCY DEVICES I Discrete MGF 49 41 A L TTB0 0 Device Structure — 1x: MES FET (Small Signal) 3x:HBT 4x:HEMT B Chip Type 0 Series Number 0 Auxiliary Symbol I For...

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Please visit our website for further details. -Keep safety first in your circuit designs! - • Mitsubishi Electric Corporation puts the maximum effort Into making semiconductor products better and more reliable, but there Is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal Injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as 0) placement of substitutive, auxiliary circuits, (10 use of non-flammable material or (III) prevention against any...

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