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High Frequency Devices_2013

High Frequency Devices_2013
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High Frequency Devices_2013

Product catalog summary
Overview
This document provides a comprehensive overview of high-frequency devices, focusing on GaAs and GaN products designed for various communication systems, including satellite communication, base stations, and mobile terminals. It outlines the product lineup, selection maps, and application examples for these devices.
Product Lineup
The document categorizes products into several series, including GaAs FET Series for Microwave-band Low-Noise Amplifiers, GaAs FET/InGaP HBT Series for Microwave-band High Power Amplifiers, GaAs Power Amplifiers for Mobile Phone and Data Communication, Internally Matched GaAs FET Series for Microwave-band High Power Amplifiers, GaAs Amplifiers for WiMAX/Wi-Fi, and GaN HEMT Series for Microwave-band High Power Amplifiers.
Specifications and Features
Detailed specifications for each product series are provided, including Noise Figure (NF) and Output Power (P1dB) for low-noise amplifiers, Output Power and Frequency Range for high power amplifiers, and package types and thermal resistance for various devices. New products and those under development are highlighted, along with AEC-Q101 qualified devices.
Application Examples
Examples of applications for these devices include Base Stations, Radio Link Systems, Mobile Telephones, Satellite Communication Systems, and Radar Systems. Specific examples of device configurations for broadcast satellites and microwave transmitter and receiver units are also provided.
Selection Maps and Product Lists
Selection maps assist in choosing the appropriate device based on application requirements. Detailed product lists include specifications such as frequency, output power, and efficiency.
Conclusion
This document serves as a technical guide for selecting high-frequency devices suitable for various communication applications, emphasizing the capabilities and specifications of GaAs and GaN technologies.
Product Configurations
The document mentions dual and triple band configurations, RF-IC ANT-SW, DC/DC, and Vref Gen. Specific product codes such as BA012B6, BA012J1, BA012J2C, and BA012J5C are listed, indicating different semiconductor components.
Safety Considerations
Emphasis is placed on safety in circuit designs. Recommendations include using substitutive or auxiliary circuits, non-flammable materials, and preventive measures against malfunctions. The document warns of potential risks such as personal injury, fire, or property damage due to semiconductor issues.
Legal and Usage Notes
The materials are intended as a reference for selecting suitable Mitsubishi semiconductor products. They do not grant any intellectual property rights. Mitsubishi Electric Corporation disclaims responsibility for damages or third-party rights infringements arising from the use of the information. The document advises verifying the latest product information due to possible changes and inaccuracies.
Export Control
Products or technologies subject to Japanese export control restrictions require a license for export and cannot be imported into unauthorized countries. Diversion contrary to export control laws is prohibited.
Contact Information
For further details, Mitsubishi Electric Corporation's website and contact information are provided.
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Catalog excerpts

High Frequency Devices_2013-1

HIGH FREQUENCY DEVICES High Frequency

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High Frequency Devices_2013-2

The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed for satellite communication systems to base stations and cellular handset applications. GaAs FET/HEMT Series for Microwave-band Low-Noise Amplifiers Internally Matched GaAs FET Series for Microwave-band High Power Amplifiers GaAs Power Amplifiers for Mobile Phone and Data Communication...

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High Frequency Devices_2013-3

~X/Ku Band I GaAs FET/InGaP HBT SERIES FOR MICROWAVE-BAND HIGH POWER AMPLIFIERS (Discrete Devices) Output Power G Radio Link System G Satellite Communication #: New Product ##: Under Development I: AEC-Q101 qualified I GaN HEMT SERIES FOR MICROWAVE-BAND HIGH POWER AMPLIFIERS (Discrete Devices / Internally Matched) ~L/S/C Band (~5GHz) Output Power APPLICATION EXAMPLES PRODUCT LIST G Base Station G Radio Link System G C- SATCOM G Radio Link System G Ku- SATCOM G Satellite Communication #: New Product ##: Under Development

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High Frequency Devices_2013-4

I INTERNALLY MATCHED GaAs FET SERIES FOR MICROWAVE-BAND HIGH POWER AMPLIFIERS LINE UP G Base Station G Radio Link System G Radio Link System PRODUCT LIST I GaAs POWER AMPLIFIERS FOR MOBILE PHONE AND DATA COMMUNICATION W-CDMA APPLICATION EXAMPLES

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High Frequency Devices_2013-5

I GaAs AMPLIFIERS FOR WiMAX / Wi-Fi LINE UP Frequenc y [GH z] PRODUCT LIST Type Name Definition of High Frequency Devices I GaAs FET/GaN HEMT (Discrete) I GaN HEMT (Internally Matched) Freq. Band : C Typical Output power in dBm GaN : G APPLICATION EXAMPLES I Internally Matched GaAs FET and GaAs Power Amplifier for WiMAX/Wi-Fi Typical Output power in dBm ex.36=36dBm=4W(typ.) Internally Matched : V, A, B Multi Stage FET Amp : H Multi Stage HBT Amp : E Freq. Band in GHz ex.5964=5.9-6.4GHz Series Number I GaAs Power Amplifier BA 01 2 D6 Device Structure : FA(FET), BA(Bipolar Transistor) Stage Number...

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High Frequency Devices_2013-6

I GaAs FET/HEMT SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS Package Outline Drain Current Ta=25°C #: New Product ##: Under Development I: AEC-Q101 qualified I GaAs FET SERIES FOR MICROWAVE-BAND HIGH POWER AMPLIFIERS (Discrete Devices) PRODUCT LIST Type Number Output Power at 1dB Gain Compression Output Power [dBm] APPLICATION EXAMPLES Ta=25°C L: Industrial grade #: New Product ##: Under Development Linear Power Gain Power DrainDrain Added Frequency Source Current Eciency [GHz] Voltage [A] [%] Package Outline

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High Frequency Devices_2013-7

I GaN HEMT SERIES FOR MICROWAVE-BAND HIGH POWER AMPLIFIERS (Discrete Devices) Output Power at 3dB Gain Compression Output Power [dBm] Min. Linear Power Gain Type Number DrainDrain Drain Source Eciency Frequency Voltage Current [GHz] [%] [A] Package Outline Type Number Output Power at 3dB Gain Compression Output Power [dBm] Min. Linear Power Gain Power DrainDrain Added Frequency Source Current Eciency [GHz] Voltage Package Outline I GaN HEMT SERIES FOR SATELLITE COMMUNICATION (Internally Matched) Ta=25°C #: New Product ##: Under Development MGFG5H1502 Driver for 50W+80W GaN HEMT, MGFG5H1503 Driver...

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High Frequency Devices_2013-8

I INTERNALLY MATCHED GaAs FET SERIES FOR C BAND HIGH POWER AMPLIFIERS Type Number Output Power at 1dB Gain Compression [dBm] Linear Power Gain Power Added Efficiency PRODUCT LIST DrainSource Voltage Drain Current Package Outline APPLICATION EXAMPLES I INTERNALLY MATCHED GaAs FET SERIES FOR X/Ku BAND HIGH POWER AMPLIFIERS Type Number Output Power at 1dB Gain Compression [dBm] Linear Power Gain Power Added Efficiency Drain Current Package Outline

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High Frequency Devices_2013-9

I GaAs POWER AMPLIFIERS FOR MOBILE PHONE AND DATA COMMUNICATION Type Number Package Size HSPA/LTE HSPA/LTE/CDMA2000 HSPA/LTE/CDMA2000 HSPA/LTE/CDMA2000 HSPA/LTE HSPA/LTE HSPA/LTE I GaAs AMPLIFIER FOR WiMAX / Wi-Fi Package Outline PRODUCT LIST Type Number APPLICATION EXAMPLES RoHS Compliant

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High Frequency Devices_2013-10

Lineup for 12GHz -Band LNB LINE UP Broadcast Satellite BS Tuner Standard Model PRODUCT LIST Lineup for Microwave Links APPLICATION EXAMPLES Microwave Transmitter & Receiver Unit LNA HPA Down Conv. Up Conv. Indoor Unit

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High Frequency Devices_2013-11

Lineup for Satellite Communication LINE UP Communication Satellite Microwave Transmitter & Receiver Unit LNA HPA Indoor Unit Down Conv. PRODUCT LIST GaAs Power Amplifiers for Mobile Phone and Data Communication Tx block configuration for mobile phone Smart Meter Vending Machine (Base Transceiver Station) APPLICATION EXAMPLES Cellular Phone/ Smart Phone Ex.2: Triple band configuration BA012J5C Ex.1: Dual band configuration MITSUBISHI ELECTRIC SEMICONDUCTORS

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High Frequency Devices_2013-12

HIGH FREQUENCY DEVICES Please visit our website for further details. Keep safety first in your circuit designs! • Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention...

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