High Frequency Devices
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High Frequency Devices - 1

HIGH FREQUENCY DEVICES High Frequency

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High Frequency Devices - 2

The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed for satellite communication systems to base stations and cellular handset applications. GaAs FET/HEMT Series for Microwave-band Low-Noise Amplifiers Internally Matched GaAs FET Series for Microwave-band High Power Amplifiers GaAs Power Amplifiers for Mobile Phone and Data...

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High Frequency Devices - 3

~X/Ku Band I GaAs FET/InGaP HBT SERIES FOR MICROWAVE-BAND HIGH POWER AMPLIFIERS (Discrete Devices) Output Power G Radio Link System G Satellite Communication #: New Product ##: Under Development I: AEC-Q101 qualified I GaN HEMT SERIES FOR MICROWAVE-BAND HIGH POWER AMPLIFIERS (Discrete Devices / Internally Matched) ~L/S/C Band (~5GHz) Output Power APPLICATION EXAMPLES PRODUCT LIST G Base Station G Radio Link System G C- SATCOM G Radio Link System G Ku- SATCOM G Satellite Communication #: New Product ##: Under Development

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High Frequency Devices - 4

I INTERNALLY MATCHED GaAs FET SERIES FOR MICROWAVE-BAND HIGH POWER AMPLIFIERS LINE UP G Base Station G Radio Link System G Radio Link System PRODUCT LIST I GaAs POWER AMPLIFIERS FOR MOBILE PHONE AND DATA COMMUNICATION W-CDMA APPLICATION EXAMPLES

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High Frequency Devices - 5

I GaAs AMPLIFIERS FOR WiMAX / Wi-Fi LINE UP Frequenc y [GH z] PRODUCT LIST Type Name Definition of High Frequency Devices I GaAs FET/GaN HEMT (Discrete) I GaN HEMT (Internally Matched) Freq. Band : C Typical Output power in dBm GaN : G APPLICATION EXAMPLES I Internally Matched GaAs FET and GaAs Power Amplifier for WiMAX/Wi-Fi Typical Output power in dBm ex.36=36dBm=4W(typ.) Internally Matched : V, A, B Multi Stage FET Amp : H Multi Stage HBT Amp : E Freq. Band in GHz ex.5964=5.9-6.4GHz Series Number I GaAs Power Amplifier BA 01 2 D6 Device Structure : FA(FET), BA(Bipolar Transistor) Stage...

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High Frequency Devices - 6

I GaAs FET/HEMT SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS Package Outline Drain Current Ta=25°C #: New Product ##: Under Development I: AEC-Q101 qualified I GaAs FET SERIES FOR MICROWAVE-BAND HIGH POWER AMPLIFIERS (Discrete Devices) PRODUCT LIST Type Number Output Power at 1dB Gain Compression Output Power [dBm] APPLICATION EXAMPLES Ta=25°C L: Industrial grade #: New Product ##: Under Development Linear Power Gain Power DrainDrain Added Frequency Source Current Eciency [GHz] Voltage [A] [%] Package Outline

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High Frequency Devices - 7

I GaN HEMT SERIES FOR MICROWAVE-BAND HIGH POWER AMPLIFIERS (Discrete Devices) Output Power at 3dB Gain Compression Output Power [dBm] Min. Linear Power Gain Type Number DrainDrain Drain Source Eciency Frequency Voltage Current [GHz] [%] [A] Package Outline Type Number Output Power at 3dB Gain Compression Output Power [dBm] Min. Linear Power Gain Power DrainDrain Added Frequency Source Current Eciency [GHz] Voltage Package Outline I GaN HEMT SERIES FOR SATELLITE COMMUNICATION (Internally Matched) Ta=25°C #: New Product ##: Under Development MGFG5H1502 Driver for 50W+80W GaN HEMT, MGFG5H1503...

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High Frequency Devices - 8

I INTERNALLY MATCHED GaAs FET SERIES FOR C BAND HIGH POWER AMPLIFIERS Type Number Output Power at 1dB Gain Compression [dBm] Linear Power Gain Power Added Efficiency PRODUCT LIST DrainSource Voltage Drain Current Package Outline APPLICATION EXAMPLES I INTERNALLY MATCHED GaAs FET SERIES FOR X/Ku BAND HIGH POWER AMPLIFIERS Type Number Output Power at 1dB Gain Compression [dBm] Linear Power Gain Power Added Efficiency Drain Current Package Outline

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High Frequency Devices - 9

I GaAs POWER AMPLIFIERS FOR MOBILE PHONE AND DATA COMMUNICATION Type Number Package Size HSPA/LTE HSPA/LTE/CDMA2000 HSPA/LTE/CDMA2000 HSPA/LTE/CDMA2000 HSPA/LTE HSPA/LTE HSPA/LTE I GaAs AMPLIFIER FOR WiMAX / Wi-Fi Package Outline PRODUCT LIST Type Number APPLICATION EXAMPLES RoHS Compliant

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High Frequency Devices - 10

Lineup for 12GHz -Band LNB LINE UP Broadcast Satellite BS Tuner Standard Model PRODUCT LIST Lineup for Microwave Links APPLICATION EXAMPLES Microwave Transmitter & Receiver Unit LNA HPA Down Conv. Up Conv. Indoor Unit

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High Frequency Devices - 11

Lineup for Satellite Communication LINE UP Communication Satellite Microwave Transmitter & Receiver Unit LNA HPA Indoor Unit Down Conv. PRODUCT LIST GaAs Power Amplifiers for Mobile Phone and Data Communication Tx block configuration for mobile phone Smart Meter Vending Machine (Base Transceiver Station) APPLICATION EXAMPLES Cellular Phone/ Smart Phone Ex.2: Triple band configuration BA012J5C Ex.1: Dual band configuration MITSUBISHI ELECTRIC SEMICONDUCTORS

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High Frequency Devices - 12

HIGH FREQUENCY DEVICES Please visit our website for further details. Keep safety first in your circuit designs! • Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii)...

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